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| AP2422GY Pb Free Plating Product Advanced Power Electronics Corp. Capable of 2.5V gate drive Lower on-resistance Surface mount package RoHS compliant 2928-8 D2 D2 D1 D1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G2 S2 G1 S1 30V 40m 4.8A ID Description Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. G1 D1 D2 G2 S1 S2 The 2928-8 J-lead package provides good on-resistance performance and space saving like TSOP-6. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 30 12 4.8 3.8 20 1.39 0.01 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 90 Unit /W Data and specifications subject to change without notice 200816053-1/4 AP2422GY Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA 2 Min. 30 0.5 - Typ. 0.02 9 3 1.3 4 10 11 17 5 480 90 70 1.5 Max. Units 32 40 60 1.2 1 10 100 5 770 2.3 V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A VGS=4.5V, ID=4A VGS=2.5V, ID=2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=5V, ID=4A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=12V ID=4A VDS=25V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=5V RD=15 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=1.1A, VGS=0V IS=4A, VGS=0V, dI/dt=100A/s Min. - Typ. 18 10 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board , t <5sec ; 155/W at steady state. 2/4 AP2422GY 20 20 T A =25 C 16 o ID , Drain Current (A) 12 ID , Drain Current (A) 5.0 V 4.5 V 3.5 V 2.5 V T A = 150 C 16 o 5.0 V 4.5 V 3.5 V 12 2.5 V 8 8 4 4 V G = 1.5 V 0 0 1 2 3 4 V G = 1.5 V 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 80 1.8 ID=2A T A =25 Normalized RDS(ON) 60 ID=4A V G = 4.5 V 1.4 RDS(ON) (m ) 40 1.0 20 0 2 4 6 8 10 0.6 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 4 3 Normalized VGS(th) (V) T j =150 o C IS(A) 2 T j =25 o C 1.2 0.6 1 0 0 0.2 0.4 0.6 0.8 1 1.2 0.0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP2422GY 15 1000 f=1.0MHz ID=4A VGS , Gate to Source Voltage (V) C iss 12 9 C (pF) V DS = 15 V V DS = 20 V V DS = 25 V 100 C oss C rss 6 3 0 0 5 10 15 20 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthja) Duty factor=0.5 10 100us ID (A) 1ms 1 0.2 0.1 0.1 10ms 0.1 0.05 PDM t T 0.02 0.01 T A =25 o C Single Pulse 100ms 1s DC 10 100 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=155 oC/W Single Pulse 0.01 0.1 1 0.01 0.0001 0.001 0.01 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 15 V DS =5V 12 VG QG ID , Drain Current (A) T j =25 o C 9 T j =150 o C 4.5V QGS QGD 6 3 Charge 0 Q 0 1 2 3 4 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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